METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A method for manufacturing a capacitor is provided to improve a capacitance by increasing surface area of capacitor and to improve an adhesive force between lower electrodes. CONSTITUTION: A first lower electrode(9) of capacitors is formed on an exposed semiconductor substrate having transistors by patterning a polysilicon. An oxide layer of a high temperature and a low pressure is deposited on the first lower layer. And the oxide layer of a high temperature and a low pressure is patterned so as to expose a portion of the first lower electrode. A polysilicon layer is deposited on the exposed first lower electrode(9) and the oxide layers of a high temperature and a low pressure. A second lower electrode(10) connected to the first lower electrode(9) is formed by patterning the polysilicon layer.