发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit provided with an output circuit of a CMOS configuration capable of suppressing a through-current even when the size of a CMOS FET is large and suppressing an increase in a consumption current. SOLUTION: This semiconductor integrated circuit is provided with first control circuit 10 to which a signal supplied from an internal circuit is inputted, a second control circuit 20 to which an output signal of the first control circuit is inputted and which generates two output signals in which their mutual rise timing and fall timing are different and the periods of their same logical level are also different, and an output buffer circuit 30 where the respective drains of a PMOS FET 31 for current discharge and an NMOS FET 32 for current absorption, whose gates two output signals of the second control circuit are supplied to in accordance with each other, are connected to its output terminal 52. The second control circuit controls so as to turn on one FET in an off mode between the COMOS FETs of the output buffer circuit after the other FET in an on mode is reversed to an off mode.
申请公布号 JP2002164777(A) 申请公布日期 2002.06.07
申请号 JP20000362821 申请日期 2000.11.29
申请人 TOSHIBA MICROELECTRONICS CORP;TOSHIBA CORP 发明人 YOKOYAMA MASASHIGE
分类号 H03K17/16;H03K17/687;H03K19/0175;(IPC1-7):H03K19/017 主分类号 H03K17/16
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