发明名称 HEAT TREATMENT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a heat treatment device in which the temperature of an object to be treated is raised at high speed and which is superior in economical efficiency. SOLUTION: The heat treatment device as one side has a treatment chamber performing heat treatment on the object to be treated, a light source irradiating the object to be treated with infrared light and heating it and a window which is air-tightly fitted to the treatment chamber, decides the treatment chamber, can irradiate the object to be treated with infrared light from outside the treatment chamber and is formed of optical crystal through which a wavelength longer than that of quartz can be transmitted. The object to be treated is a Bulk-Si wafer or an SOI wafer.
申请公布号 JP2002261038(A) 申请公布日期 2002.09.13
申请号 JP20010059148 申请日期 2001.03.02
申请人 TOKYO ELECTRON LTD 发明人 SHIMIZU MASAHIRO
分类号 H01L21/302;H01L21/26;H01L21/3065;H01L21/31;H01L27/12;(IPC1-7):H01L21/26;H01L21/306 主分类号 H01L21/302
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