发明名称 |
POLISHING LIQUID AND POLISHING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide polishing liquid flatly polishing a copper plating film formed on a substrate surface by electropolishing or chemical polishing and capable of selectively polishing the copper and other conductive substance except for the copper by the electropolishing or the chemical polishing and to provide a polishing method capable of omitting CMP(Chemical Mechanical Polishing) itself or reducing the load of the CMP as much as possible by using the polishing liquid. SOLUTION: This polishing liquid electropolishes or chemically polishes the copper by dipping the substrate having the copper film formed on its surface and the copper embedded in its micro recesses, therein. This liquid is characterized in including one type or more of either of inorganic acid and/or organic acid dissolving the copper, and one type or more of either of polyalcohols, polymer polyalcohols, or alkyleneglycol alkylethers as thickener.
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申请公布号 |
JP2002337025(A) |
申请公布日期 |
2002.11.26 |
申请号 |
JP20010197329 |
申请日期 |
2001.06.28 |
申请人 |
EBARA CORP;EBARA UDYLITE KK |
发明人 |
HONGO AKIHISA;MATSUDA NAOKI;KIMIZUKA RYOICHI |
分类号 |
B23H5/12;C23F1/18;C25F3/30;H01L21/304;(IPC1-7):B23H5/12 |
主分类号 |
B23H5/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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