发明名称 POLISHING LIQUID AND POLISHING METHOD
摘要 PROBLEM TO BE SOLVED: To provide polishing liquid flatly polishing a copper plating film formed on a substrate surface by electropolishing or chemical polishing and capable of selectively polishing the copper and other conductive substance except for the copper by the electropolishing or the chemical polishing and to provide a polishing method capable of omitting CMP(Chemical Mechanical Polishing) itself or reducing the load of the CMP as much as possible by using the polishing liquid. SOLUTION: This polishing liquid electropolishes or chemically polishes the copper by dipping the substrate having the copper film formed on its surface and the copper embedded in its micro recesses, therein. This liquid is characterized in including one type or more of either of inorganic acid and/or organic acid dissolving the copper, and one type or more of either of polyalcohols, polymer polyalcohols, or alkyleneglycol alkylethers as thickener.
申请公布号 JP2002337025(A) 申请公布日期 2002.11.26
申请号 JP20010197329 申请日期 2001.06.28
申请人 EBARA CORP;EBARA UDYLITE KK 发明人 HONGO AKIHISA;MATSUDA NAOKI;KIMIZUKA RYOICHI
分类号 B23H5/12;C23F1/18;C25F3/30;H01L21/304;(IPC1-7):B23H5/12 主分类号 B23H5/12
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