| 摘要 |
PURPOSE:To improve the efficiency of the title element by tilting the surface of an Si substrate by 2 deg. or 5 deg. in the direction from (100) plane to (011) or (01-1) plane and forming V-shaped grooves along the tilted direction of the surface. CONSTITUTION:In this tandem hetero-photoelectric conversion element utilizing the epitaxial growth of a III-V group compound semiconductor on an Si substrate 121, V-grooves are formed along the titled direction of the surface of the substrate 121 from its (100) face. In addition, the epitaxially growing condition of a III-V group compound semiconductor on the substrate 121 with the V-grooves is set so that the growing temperature and incident flux ratio of the V-group element against the III group element can respectively become <=500 deg.C and >=15. Therefore, a highly efficient photoelectric conversion element in which the reflection of incident light is reduced and the generation of an anti-phase boundary is suppressed can be obtained. |
