发明名称 |
Method of plasma etching of high-K dielectric materials with high selectivity to underlying layers |
摘要 |
A method of etching high dielectric constant materials using halogen gas and reducing gas chemistry. An embodiment of the method is accomplished using a 20 to 300 sccm of chlorine and 2 to 200 sccm of carbon monoxide, regulated to a total chamber pressure of 2-100 mTorr to etch a hafnium oxide layer.
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申请公布号 |
US6806095(B2) |
申请公布日期 |
2004.10.19 |
申请号 |
US20020092795 |
申请日期 |
2002.03.06 |
申请人 |
NALLAN PADMAPANI C.;JIN GUANGXIANG;KUMAR AJAY |
发明人 |
NALLAN PADMAPANI C.;JIN GUANGXIANG;KUMAR AJAY |
分类号 |
H01L21/311;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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