| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which realizes emission of light having a strong light emission intensity and having a desired light tone, in particular, emission of light including red color or emission of white color. <P>SOLUTION: A semiconductor light emitting element 30 comprises a sapphire substrate 31, a base layer 32 made of GaN, an n-type contact layer 33 made of GaN, an n-type cladding layer 34 made of n-type Al<SB>0.15</SB>Ga<SB>0.85</SB>N, a light emitting layer 35 of a quantum well structure wherein an In<SB>0.15</SB>Ga<SB>0.85</SB>N well layer and a GaN barrier layer are alternately laminated by three cycles, a p-type cladding layer 36 made of p-type Al<SB>0.15</SB>Ga<SB>0.85</SB>N, and a p-type contact layer 37 of a structure wherein an Al<SB>0.15</SB>Ga<SB>0.85</SB>N layer and an In<SB>0.2</SB>Ga<SB>0.8</SB>N layer each having a thickness of 2 nm are laminated alternately by a plurality of cycles and which contains rare earth element Eu doped therein. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
