SINGLE STEP, HIGH TEMPERATURE NUCLEATION PROCESS FOR A LATTICE MISMATCHED SUBSTRATE
摘要
<p>A single step process for nucleation and subsequent epitaxial growth on a lattice mismatched substrate is achieved by pre-treating the substrate surface with at least one group III reactant or at least one group II reactant prior to the introduction of a group V reactant or a group VI reactant. The group III reactant or the group II reactant is introduced into a growth chamber at an elevated growth temperature to wet a substrate surface prior to any actual crystal growth. Once the pre-treatment of the surface is complete, a group V reactant or a group VI reactant is introduced to the growth chamber to commence the deposition of a nucleation layer. A buffer layer is then grown on the nucleation layer providing a surface upon which the epitaxial layer is grown preferably without changing the temperature within the chamber.</p>
申请公布号
WO2006093707(A2)
申请公布日期
2006.09.08
申请号
WO2006US05921
申请日期
2006.02.22
申请人
CORNELL RESEARCH FOUNDATION, INC.;SHEALY, JAMES R;SMART, JOSEPH A