| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacture, by which cracking or chipping is reduced at the time of chip segmentation for resolving the problem wherein cracks and chipping occur, and segmentation yield is deteriorated, when a wafer substrate is segmented into chip GaN semiconductor light-emitting devices by cutting along the non-cleavage faces. SOLUTION: The substrate 61 is provided with high-dislocation/low-dislocation regions 5, which are arranged like stripes, in the longitudinal direction of resonators of the light-emitting devices. It is subjected to scribing several times along chip segmentation lines which are defined along the longitudinal direction of the resonators on the high-dislocation/low-dislocation regions 5 over their entire length, and thereafter it is divided into chips. COPYRIGHT: (C)2008,JPO&INPIT |
