SEMICONDUCTOR DEVICE INCLUDING ACTIVE PATTERN WITH CHANNEL RECESS, AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device having an active pattern having a channel recess and a method for manufacturing the same are provided to suppress a narrow width effect by increasing a channel width. An active pattern(100b) having first active regions and a second active region arranged between the first active regions is formed on an upper part of a semiconductor substrate(100). An isolation layer(110) is formed to surround the active pattern. A channel recess part for exposing sidewalls of the first active regions facing each other is formed by recessing an upper region of the second active region. A groove(110a) for exposing a sidewall of the second active region is formed within the isolation layer. Sidewalls of the groove are protruded in comparison with the sidewalls of the first active regions.