NON-VOLATILE MEMORY DEVICE HAVING CHARGE TRAPPING LAYER AND METHOD OF FABRICATING THE SAME

摘要

A nonvolatile memory device having a charge trap layer and a method for manufacturing the same are provided to improve an erase operation speed without a recess characteristic degradation by using a stoichiometric silicon nitride layer and a silicon-rich silicon nitride layer as the charge trap layer. A tunneling layer(210) is arranged on a substrate(200). A charge trap layer(220) consists of a stoichiometric silicon nitride layer(221) and a silicon-rich silicon nitride layer(222) which are sequentially arranged on the tunneling layer. A blocking layer(230) is arranged on the charge trap layer to block the movement of charges. A control gate electrode(240) is arranged on the blocking layer. The tunneling layer is a silicon oxide(SiO2) layer. A thickness of the silicon oxide layer is at least 20 Å to 60 Å. A thickness of the charge trap layer is 60 Å to 180 Å. A thickness of the stoichiometric silicon nitride layer is 20 Å to 60 Å.