| 摘要 |
A magnetic random access memory includes a semiconductor substrate having a projection projecting from a substrate surface, first and second gate electrodes and a first source diffusion layer formed on first and second side surfaces and an upper surface of the projection, first and second drain diffusion layers formed in the substrate surface at roots on the first and second side surfaces of the first projection, first and second word lines formed above the semiconductor substrate, a bit line formed above the first and second word lines, a first magnetoresistive effect element formed between the bit line and the first word line, a second magnetoresistive effect element formed between the bit line and the second word line, a first contact which connects the first magnetoresistive effect element and the first drain diffusion layer, and a second contact which connects the second magnetoresistive effect element and the second drain diffusion layer.
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