REVERSE CONDUCTING INSULATED GATE BIPOLAR TRANSISTOR

摘要

A semiconductor layer of a reverse conducting insulated gate bipolar transistor is provided with a barrier region of the first conductive type, wherein the barrier region is disposed in the body region and electrically connects to the emitter electrode via a pillar member which extends from the one of main surfaces of the semiconductor layer. The barrier region includes a first barrier partial region, wherein a distance between the first barrier partial region and the drift region is a first distance, and a second barrier partial region, wherein a distance between the second barrier partial region and the drift region is a second distance which is longer than the first distance. The second barrier partial region is in contact with a side surface of an insulated trench gate.

主权项

1. A reverse conducting insulated gate bipolar transistor comprising:
a semiconductor layer; an emitter electrode covering one of main surfaces of the semiconductor layer; and an insulated trench gate extending from the one of main surfaces of the semiconductor layer into the semiconductor layer, wherein the semiconductor layer comprises:
a drift region of a first conductive type, wherein the drift region is in contact with the insulated trench gate;a body region of a second conductive type, wherein the body region is disposed above the drift region and is in contact with the insulated trench gate; anda barrier region of the first conductive type, wherein the barrier region is disposed in the body region and electrically connects to the emitter electrode via a pillar member which extends from the one of main surfaces of the semiconductor layer, the barrier region includes:
a first barrier partial region, wherein a distance between the first barrier partial region and the drift region is a first distance; anda second barrier partial region, wherein a distance between the second barrier partial region and the drift region is a second distance which is longer than the first distance, and the second barrier partial region is in contact with a side surface of the insulated trench gate.