Photoresist having improved extreme-ultraviolet lithography imaging performance

摘要

Provided herein is a photoresist compound with improved extreme-ultraviolet lithography image performance. The photoresist includes a polymer that is free of an aromatic group and a photo acid generator (PAG) free of aromatic groups. The PAG includes an anion component and a cation component, wherein the anion component has one of the several specified chemical formulas and the cation component also has a specified chemical formula. The anion component includes a material selected from the group consisting of methyl and ethyl and the cation component includes a material selected from the group consisting of: an alkyl group, an alkenyl group, and an oxoalkyl group.

主权项

1. An extreme ultraviolet (EUV) photoresist, comprising:
a polymer that is free of an aromatic group; and a photo acid generator (PAG) free of aromatic groups, wherein the PAG includes an anion component and a cation component, wherein the anion component has one of the following chemical formulas:
R13C—CR12—CR12—CR12—SO3−R13C—CR12—CR12—SO3−R13C—CR12—SO3−R13C—SO3− and the cation component has a chemical formula: wherein: each R1 independently includes a material selected from the group consisting of: methyl and ethyl; and each R2 independently includes a material selected from the group consisting of: an alkyl group, an alkenyl group, and an oxoalkyl group.