| 摘要 |
According to an embodiment of the present invention, a method for forming a thin film pattern includes: a step of forming a first resist pattern on a substrate; a step of forming a second resist pattern on the first resist pattern, and a substrate; a step of forming a first metal layer on the first and second resist patterns, and the substrate; a step of exposing part of the substrate and part of the first resist pattern by removing the second resist pattern and the first metal layer formed on the second resist pattern through a first lift-off process; a step of forming a second metal layer on the exposed substrate, the exposed first resist pattern, and the first metal layer; and a step of forming a first metal pattern and a second metal pattern by removing the first resist pattern and the first and the second metal layer formed on the first resist pattern through a second lift-off process. The first resist pattern and the second resist pattern have different resolving properties. |
