发明名称 |
Semiconductor integrated circuit device having bulk bias control function and method of driving the same |
摘要 |
A semiconductor integrated circuit device having a bulk bias control function is provided. The semiconductor integrated circuit device may be configured to output the first external voltage as a bulk voltage of a transistor in a power-up period, and to output a second external voltage having a higher level than the first external voltage as the bulk voltage of the transistor in a power-down mode. |
申请公布号 |
US9417647(B2) |
申请公布日期 |
2016.08.16 |
申请号 |
US201414514027 |
申请日期 |
2014.10.14 |
申请人 |
SK HYNIX INC. |
发明人 |
Kim Yeon Uk |
分类号 |
G05F3/02;H03K19/00;H03K19/003 |
主分类号 |
G05F3/02 |
代理机构 |
William Park & Associates Ltd. |
代理人 |
William Park & Associates Ltd. |
主权项 |
1. A semiconductor integrated circuit device comprising:
a PMOS bulk bias generation block configured to output a first external voltage as a bulk voltage of a PMOS transistor in a power-up period, and output a second external voltage as the bulk voltage of the PMOS transistor in a power-down mode, in response to a bulk bias enable signal configured to be enabled in the power-down mode and a leakage signal; and a NMOS bulk bias generation block configured to output a ground voltage as a bulk voltage of an NMOS transistor in the power-up period, and output a negative voltage as the bulk voltage of the NMOS transistor in the power-down mode, in response to the bulk bias enable signal, wherein the second external voltage has a higher level than the first external voltage, and wherein the negative voltage has a larger absolute value than the ground voltage. |
地址 |
Icheon-Si KR |