发明名称 ATOMIC LAYER DEPOSITION OF PLATINUM GROUP METAL THIN FILMS
摘要 Disclosed is an atomic layer deposition method of a platinum group metal thin film. The atomic layer deposition method of a platinum group metal thin film comprises: a step of preprocessing H_2S or NH_3 on a substrate; and a step of forming a platinum group metal thin film on the substrate. As such, the present invention enables a continuous deposition of the thin film by controlling a size and distribution of platinum group nanoparticles.
申请公布号 KR101651512(B1) 申请公布日期 2016.08.29
申请号 KR20150077138 申请日期 2015.06.01
申请人 KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 KIM, SEONG KEUN;JEONG, DOO SEOK;KWON, BEOM JIN;BAEK, SEUNG HYUB;KANG, CHONG YUN;CHOI, JI WON;KIM, JIN SANG;PYEON, JUNG JOON
分类号 C23C16/455;C23C16/02;C23C16/06 主分类号 C23C16/455
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