| 发明名称 | Method for simulating the electrical behaviour of an integrated diode and corresponding computerized system | ||
| 摘要 | A method for simulating, in an electrical device simulator, electrical behavior of an integrated diode is described. The diode is modelled using a compact model in the electrical device simulator to determine the electrical behavior of the diode in a given situation. The modelling includes modelling a series resistance relating to the active regions and to the connections, modelling a PN junction of the diode, and modelling a well resistance for positive values of a current passing through the diode involving a conductivity modulation model. The method further includes modelling of the well resistance for negative values of the current by a curve which increases steeply from an initial resistance value corresponding to a zero value of current up to a plateau. | ||
| 申请公布号 | US9430592(B2) | 申请公布日期 | 2016.08.30 |
| 申请号 | US201213689997 | 申请日期 | 2012.11.30 |
| 申请人 | STMicroelectronics SA | 发明人 | Manouvrier Jean-Robert |
| 分类号 | G06F17/50;G06G7/62 | 主分类号 | G06F17/50 |
| 代理机构 | Slater Matsil, LLP | 代理人 | Slater Matsil, LLP |
| 主权项 | 1. A method for manufacturing a semiconductor device comprising an integrated diode, the method comprising: fabricating the integrated diode, the integrated diode comprising a well having a first type of conductivity, a first active region having a second type of conductivity opposite from the first type and at least one second active region having the first type of conductivity, the first and the second active regions forming an anode and a cathode of the diode, and connections on the first and the second active regions; modelling a compact model of the diode in the electrical device simulator to determine the electrical behavior of the diode in the given situation, the modelling comprising: modelling a series resistance relating to the active regions and to the connections;modelling a PN junction of the diode;modelling a well resistance for positive values of a current passing through the diode using a conductivity modulation model; andmodelling of the well resistance for negative values of the current by a curve which increases from an initial resistance value corresponding to a zero value of current up to a plateau having a constant maximum value. | ||
| 地址 | Montrouge FR | ||