| 摘要 |
PURPOSE:To provide a semiconductor light emitting device having a semi- insulating buried structure, which can be operated in a high efficiency with a high output and a method for manufacturing the same. CONSTITUTION:A mesa stipe, having an n-type InP buffer layer 2, an active layer 1 and a p-type InP clad layer 3, is disposed on an n-type InP substrate 10, the thickness of the layer 3 is reduced, and the height of the mesa stripe is lowered. The upper part of the mesa stripe is removed up to a height at least covering the active layer 1, and a mesa protective layer 4 is provided, and a semi-insulating Fe-doped InP current blocking layer 5 is provided on the mesa layer 4. Since a junction area between the mesa stripe and the mesa protective layer 4 is reduced, thereby a current leakage passage is narrowed. |
