| 摘要 |
1,057,810. Semi-conductor devices. SIEMENS-SCHUCKERTWERKE A.G. Dec. 15, 1965 [Dec. 16, 1964], No. 53332/65. Heading H1K. In a PNPN thyristor, recombination centres are produced in the central P-type zone by diffusion and in the central N-type zone by irradiation; As shown, gold is diffused into the central P-type zone 13a during the alloying of an antimony-containing gold emitter electrode 17 to one face of a silicon body 1 which is then exposed to a beam of high-energy electrons, fast neutrons, protons, or gamma radiation. |
