| 摘要 |
A biasing network (2) including a MOS transistor (12) provides a biasing voltage (Vy) to bias a bipolar voltage amplifier (4) having a base emitter voltage (VBE) of an opposite temperature coefficient from the biasing network (2). A summing node (17) sums the biasing voltage (Vy) and the base emitter voltage (VBE) to provide an overall low temperature coefficient to provide a constant output voltage (Vx) for the amplifier (4) over temperature.
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