发明名称 |
PRODUCTION OF HIGHLY TOUGH SILICON NITRIDE SINTERED COMPACT |
摘要 |
PURPOSE:To prevent micro-cracks from forming in a silicon nitride sintered compact and remarkably improve the toughness value. CONSTITUTION:Si3N4 powder containing oxide-based sintering assistant powder or Si3N4 powder containing the oxide-based superconducting sintering assistant powder and Cr3C2 powder is formed and the resultant compact is then pressed and sintered to provide a sintered compact. In the process, the compact is cooled within the temperature region from the maximum sintering temperature to 1200 deg.C at <=10 deg.C/min rate. |
申请公布号 |
JPH0543331(A) |
申请公布日期 |
1993.02.23 |
申请号 |
JP19910218057 |
申请日期 |
1991.08.05 |
申请人 |
DENKI KAGAKU KOGYO KK |
发明人 |
YOSHIDA AKIO;ISOZAKI HIROSHI |
分类号 |
C04B35/584;C04B35/58;C04B35/64 |
主分类号 |
C04B35/584 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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