发明名称 PRODUCTION OF HIGHLY TOUGH SILICON NITRIDE SINTERED COMPACT
摘要 PURPOSE:To prevent micro-cracks from forming in a silicon nitride sintered compact and remarkably improve the toughness value. CONSTITUTION:Si3N4 powder containing oxide-based sintering assistant powder or Si3N4 powder containing the oxide-based superconducting sintering assistant powder and Cr3C2 powder is formed and the resultant compact is then pressed and sintered to provide a sintered compact. In the process, the compact is cooled within the temperature region from the maximum sintering temperature to 1200 deg.C at <=10 deg.C/min rate.
申请公布号 JPH0543331(A) 申请公布日期 1993.02.23
申请号 JP19910218057 申请日期 1991.08.05
申请人 DENKI KAGAKU KOGYO KK 发明人 YOSHIDA AKIO;ISOZAKI HIROSHI
分类号 C04B35/584;C04B35/58;C04B35/64 主分类号 C04B35/584
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