Halbleiterbauelement zur Verstaerkung von Mikrowellen

摘要

A semiconductor microwave amplifier is described with a construction to suppress the formation of travelling domains producing unwanted oscillations. In one embodiment, the device construction includes an active epitaxial layer of one conductivity type on a substrate of the oppsoite conductivity type, resulting in a p-n junction which is reversed biased during use. Contacts are provided on the active layer. Means are also provided to introduce and extract signals from the device.