发明名称 Circuit and method for an SRAM with reduced power consumption
摘要 A circuit and method for providing an SRAM memory with reduced power consumption, the SRAM memory particularly useful for embedding SRAM memory with other logic and memory functions in an integrated circuit. A lower supply voltage is provided to the peripheral circuitry for the SRAM memory. A level shifter circuit is provided coupled to the lower power supply and outputting a higher supply voltage. An array of SRAM memory cells that may comprise 4T, 6T or 8T static RAM memory cells are coupled to the higher supply voltage during read and write operations. Operating the peripheral circuitry of the SRAM memory at the lower supply voltage achieves reduced power consumption for the SRAM memory and the integrated circuit.
申请公布号 US7359272(B2) 申请公布日期 2008.04.15
申请号 US20060506438 申请日期 2006.08.18
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 WANG PING-WEI;MII YUH-JIER
分类号 G11C7/00 主分类号 G11C7/00
代理机构 代理人
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