| 摘要 |
1292346 Semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 29 Dec 1969 [31 Dec 1968] 63040/69 Heading H1K A semi-conductor device comprises initially a four layer structure in which all four layers have contact pads, but not all the pads have external connections, the choice of connections enabling different types of device to be formed. The devices may be photosensitive. The structure initially comprises an n-type silicon wafer 1 into the faces of which are diffused p-type regions 4 and 5 and a further n-type region 7, using boron and phosphorus as dopants. The region 7 is situated to one side of the region 4 in order that light incident on the surface is not obstructed on its way to the junction between regions 4 and 1. A photo-diode may be formed by making connections to regions 1 and 4 only, region 5 being removed mechanically or, for example, by chemical etching. A phototransistor may be formed by connecting to regions 7 and 1, region 5 being removed. A photo-thyristor may be formed by connecting to regions 5 and 7 only. An oxide layer 9 may be formed during the diffusion processes. |
