发明名称 Laser applied surface film
摘要 <p>A thin material layer on a substrate is applied using an intensive light beam which is made to pass through a thin transfer layer of the material to, be deposited, which is placed in from of the substrate. Laser beams are employed for this process, which can be carried out in vacuum. The transfer material pref. consists of an inorganic salt of the metal to be deposited, dithiozonates being the most suitable. Used to produce semiconductors.</p>
申请公布号 FR2083740(A5) 申请公布日期 1971.12.17
申请号 FR19700010165 申请日期 1970.03.20
申请人 THOMSON CSF 发明人
分类号 C23C14/28;C23C16/48;(IPC1-7):23C17/00;01L7/00;01J17/00 主分类号 C23C14/28
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