| 发明名称 |
OHMIC CONTACTS FOR GALLIUM ARSENIDE |
| 摘要 |
Improved contact resistance to a gallium arsenide body is obtained by alloying the contact metal into the GaAs body in an arsenic vapor atmosphere.
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| 申请公布号 |
US3647536(A) |
申请公布日期 |
1972.03.07 |
| 申请号 |
USD3647536 |
申请日期 |
1970.06.05 |
| 申请人 |
INTERNATIONAL STANDARD ELECTRIC CORP. |
发明人 |
GEORGE KING;JOHN WILLIAM FREDERICK RAYNER;ANTHONY CHARLES POWELL |
| 分类号 |
H01L21/285;H01L47/00;(IPC1-7):C23B5/50;C23C1/04;C23C13/04 |
主分类号 |
H01L21/285 |
| 代理机构 |
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