HIGH-VOLTAGE SEMICONDUCTOR RECTIFIER UNIT

摘要

A high-voltage semiconductor rectifier unit is provided which comprises a chain of series-connected diodes and by-pass capacitors disposed between common symmetrical metal screens so that each end of said chain is connected to a respective one of said common metal screens while the spacing between the end of the chain connected to one of common metal screens and the same screen increases at greater distances from said end of the chain. The diode chain can be divided into groups each group being disposed between symmetrical group metal screens.