发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain the manufacturing method, of a semiconductor device, wherein, when a die is bonded to a die pad by using a clad-shaped solder foil by a liquid-phase diffusion bonding operation, the thickness of a diffusion layer by a brazing material can be made thin and the mounting treatment time of the die can be shortened and to obtain the semiconductor device manufactured by the method. CONSTITUTION:A layer 4 to be diffused is first formed on the rear of a die 1 by a vapor deposition operation, a plating operation or the like. A diffusion layer 5 is then formed on the other face of the layer 4, to be diffused, which has been formed on the rear of the die 1. The diffusion layer 5 is then brought into contact with the surface of a die pad 3; a heat treatment is executed. Thereby, the die 1 is bonded to the die pad 3.
申请公布号 JPH0574824(A) 申请公布日期 1993.03.26
申请号 JP19910213718 申请日期 1991.08.26
申请人 MITSUBISHI ELECTRIC CORP 发明人 UEDA NAOTO
分类号 B23K1/00;B23K20/02;B23K101/40;H01L21/52;H01L21/60;H01L21/603 主分类号 B23K1/00
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