| 摘要 |
A method of correcting design patterns in cells, having hierarchical structure and corresponding to exposure patterns, for proximity effects when exposing resist coated on a substrate to a charged-particle beam or to light. A first frame zone (19, 21, 23) is provided having a predetermined width (h) inside the boundary (2, 3, 4) of each cell (B, C), and a second frame zone (20, 22, 24) is provided having a predetermined width (h) inside the first frame zone. Proximity effect correction operations are performed such that a pattern in the second frame zone and a pattern inside the second frame zone are used as a pattern to be corrected and a pattern in the first frame zone is used as a reference pattern when correcting pattern data in each cell for proximity effects and a pattern in the first frame zone in each cell is added to the pattern to be corrected and a pattern in the second frame zone in each cell is used as a reference pattern when correcting pattern data in a cell (A, B) directly overlying each cell for proximity effect. |
