| 摘要 |
PURPOSE:To form a steep breakdown wave-form, to make the diode resist to thermal breakdown and to increase forward currents by forming a buried layer, which has high concentration and consists of the first conduction type, to the semiconductor substrate of an epitaxial layer region at the inside of a guard ring and an interface section. CONSTITUTION:An implanted layer 7 is formed to the N<+> type silicon semiconductor substrate 3 through ion implantation. The N type epitaxial layer 4 is shaped to the upper surface of the substrate 3. The N<+> type buried layer 8 extending to the epitaxial layer 4 and the substrate 3 is formed through heat treatment and the extension and diffusion of the layer 7. A circular guard ring 2 is shaped to the surface section of the epitaxial layer 4. An insulating film 5 is molded onto the layer 4, and curcularly removed to form a contact window, and an electrode 1 is shaped to the window. |
