| 摘要 |
PURPOSE:To secure perfectness of a semiconductor crystal, and to strengthen the semiconductor integrated circuit device against electrostatic destruction by a method wherein an epitaxial layer having high impurity concentration of the same coductive type with a uniform substrate is provided on the substrate, and an epitaxial layer having low impurity concentration of the same cnductive type is provided thereon. CONSTITUTION:The epitaxial layer 102 having high impurity concentration of the same conductive type impurity concentration of 10<18>/cm<3> or more is provided on the uniform substrate 101 having the one conductive type impurity concentration of 10<17>/cm<3> or less, and the epitaxial layer 103 having low impurity concentration of the same conductive type impurity concentration of 10<17>/cm<3> or less is provided on the layer 102. As a result, because impurity concentration of the layer 102 is 10<18>/cm<3> or more, the layer has the gettering effect against contamination, and perfectness of the crystal of the layer 103 to be formed with the element is secured. Moreover because the substrate 101 has low impurity concentration, resistance of the substrate can be made sufficiently large, and accordingly the device can be strengthened against electrostatic destruction. |
