| 摘要 |
PURPOSE:To enhance the sensitivity of resist by a method wherein, after depositing the resist material of low molecules or monomolecules on a substrate, the polymerization of the resist material is caused by plasma starting polymerization, and accordingly the resist material is changed into a polymer resist film. CONSTITUTION:When a high frequency is supplied from a high frequency power source 3 to an opposed electrode 2 resulting in the generation of plasma in the electrode, the polymerization active seed generated in the plasma contacts the resist material which is deposited on the substrate 4, and the growing reaction of the polymerization called a plasma starting polymerization is started thereat. After the plasma irradiation, the polymerization advances by removing a cooler 7 and leaving it alone, and accordingly the resist material 5 on the substrate 4 grows to a resist film with uniform high molecules. |
