| 摘要 |
PURPOSE:To obtain a recording material raised in dark resistivity, by forming an amorphous silicon carbide hydride layer contg. an element of group IIIA of the periodic table and/or an amorphous silicon carbide fluoride layer on a substrate. CONSTITUTION:A substrate 1 is arranged on a substrate holder 14 in a vacuum vessel 12, a valve 36 is opened to evacuate it to a prescribed pressure, then, a heater is energized to keep the substrate 1 at a prescribed temp. Valves 20- 24, 27-30 are opened, a mixture of high purity inert gas used as a carrier gas, a gaseous silicon compd., a gaseous carbon compd., a gaseous compd. of an element of group IIIA, such as B, by 10-500ppm based on this gas from the feed sources 31, 32, 34 are introduced, and high-frequency power is applied at 0.01- 10Torr reaction pressure, from a high-frequency power supply 16 through a high- frequency electrode 17 to glow discharge the reaction gases, thus forming a 5-80,000nm thick amorphous silicon carbide hydride and or fluoride layer 2 having >=10<13>OMEGA.cm on the substrate 1. |
