发明名称 WORKING METHOD OF CRYSTAL
摘要 PURPOSE:To recognize the relation between the cutting position of crystal and the position of a wafer before work by forming the 2nd orientation flat in a different direction from the 1st orientation flat and varying its width continuously in a crystal growth axis direction. CONSTITUTION:The shoulder part 7 and part Tail 8 of LiTaO3 single crystal 6 are cut in an X-axis direction to form a boule 9. A specific flank of this boule 9 is ground by a specific extent (width l3) to form the 1st orientation flat 2. Then, the boule 9 is rotated around its center axis by a specific angle and only the end part of the part Tail 8 is installed at specific height and ground more than the 1st orientation flat 2 to form the 2nd orientation flat 5. Then, the body boule 9 having those flats 2 and 5 is cut to a specific thickness at right angles to an X axis. The widths l1 and l2 of the orientation flat 5 of the wafter are not equal, so the correspondence to the position of the crystal is obtained by its length. Thus, the relation between the cutting position of the crystal and the position of the wafer before the work is known.
申请公布号 JPS58215625(A) 申请公布日期 1983.12.15
申请号 JP19820098272 申请日期 1982.06.08
申请人 HITACHI KINZOKU KK 发明人 NOJIYOU YASUO;KUROSAWA HISAO
分类号 C30B33/00;G02F1/00;G02F1/11 主分类号 C30B33/00
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