| 发明名称 |
Gate turn-off thyristor failure detection circuit. |
| 摘要 |
<p>A gate-turn-off thyristor failure detecting circuit includes a detector (30) which detects the off-gate signal of a gate-turn-off thyristor (20) and a current level detector (32) which compares the signal with a predetermined value and produces an output signal indicative of the failure of the gate-turn-off-thyristor (20).</p> |
| 申请公布号 |
EP0112007(A1) |
申请公布日期 |
1984.06.27 |
| 申请号 |
EP19830306442 |
申请日期 |
1983.10.24 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SEKI, NAGATAKA C/O PATENT DIVISION;WATANABE, YUKIO C/O PATENT DIVISION;KOIKE, SHUNICHI C/O PATENT DIVISION |
| 分类号 |
H02H7/12;H02M1/06;H02M7/515;H03K17/0812;H03K17/10;H03K17/73;H03K17/732;(IPC1-7):02H7/12;02M1/08;03K17/725 |
主分类号 |
H02H7/12 |
| 代理机构 |
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代理人 |
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| 主权项 |
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