发明名称 SEMICONDUCTOR LIGHT POSITION DETECTOR
摘要 <p>PURPOSE:To improve the position detecting accuracy by setting to allow the length of current collecting electrodes, specific resistance, width and thickness of a material to satisfy specific conditions. CONSTITUTION:The length of current collecting electrodes is represented by #l, the specific resistance of a material is rhom, the width is w and the thickness is d, and P is represented by l.rhom/w.d. The rhos/P (where rhos is the sheet resistance of a resistance layer) in the relationship between the position detecting accuracy and rhos/P is confirmed to have k 167 according to experiments to have the value to indicate substantially constant value K for the position detecting accuracy, and d, w, l and rhom are so selected that rhos/P becomes the value K or larger to improve the position detecting accuracy.</p>
申请公布号 JPS61216490(A) 申请公布日期 1986.09.26
申请号 JP19850057754 申请日期 1985.03.22
申请人 KOMATSU LTD 发明人 TORIHATA SHIGENORI;IMAIZUMI HISAAKI;MIYATA HIROSHI
分类号 H01L31/16;G01B11/00;G01C3/00;H01L31/02 主分类号 H01L31/16
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