| 摘要 |
PURPOSE:To improve the controllability of the quantity of a raw material gas supplied by using differential pressure as a pressure gage, feeding back an output from a differential pressure gage to a control valve and controlling a carrier gas. CONSTITUTION:The title production unit has a growth furnace 7, a growth furnace introducing pipe 3, which is connected to the growth furnace 7 and flows a carrier gas into the furnace 7, an exhaust pipe 4, which bypasses the growth furnace 7, is connected to an exhauster 8 and flows the carrier gas into the exhauster 8, bubbler 9 evaporating a liquid or solid raw material housed into itself by flowing the carrier gas into itself, raw-material gas supply pipes 1, 2, three-way valves 5, 6 fitted to branching sections to the growth-furnace introducing pipe 3 and the exhaust pipe 4 of the raw-material gas supply pipes 1, 2, a needle valve 10 mounted to the raw- material gas supply pipe 2 using the bubbler 9 as a raw-material gas supply source and a differential pressure gage 14, a measuring-pressure side port thereof is connected between the bubbler 9 and the needle valve 10. Accordingly, the controllability and reproducibility of semiconductor growth are improved, thus largely enhancing the performance of a semiconductor thin-film device. |
