发明名称 DEVELOPING METHOD FOR RESIST FILM
摘要 PURPOSE:To form a patterning of the resist film having a high quality with an improved efficiency in the manufacturing step by irradiating a surface of a resist film with a laser light for prescribed periods, while wetting a surface of the resist film with a developer. CONSTITUTION:The substrate 22 adhered the resist film 21 thereon is rotated on the rotating plate 23. The developer is spraied on the substrate from a side way and an upperward direction by means of a spray apparatus 25, and then the laser light coming from the laser light source 26 is irradiated on the substrate from the side way and the upperward direction. A developing reaction is accelerated using a prescribed low concentration of the developer with the irradiation of the laiser ray. After a lapse of the prescribed periods, the radiation is stopped, thereby reducing the reaction rate and performing the development which is reduced an isotropic etching effect of the developer. The developing action is controlled by exciting the developing reaction of the resist film by wholly and uniformly irradiating the substrate, while rotating the substrate whereby the patterning of the resist film having the high quality is formed.
申请公布号 JPS61217040(A) 申请公布日期 1986.09.26
申请号 JP19850058880 申请日期 1985.03.22
申请人 FUJITSU LTD 发明人 ARII KATSUYUKI;NAGASHIMA SETSUO;HIROSE MINORU
分类号 H01L21/30;G03F7/30;H01L21/027 主分类号 H01L21/30
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