| 摘要 |
PURPOSE:To obtain the solid-state image pickup device of a high dynamic range by constituting the gate electrode of a vertical transferring CCD of five electrodes or above. CONSTITUTION:For a vertical transferring CCD3, the first to sixth 6 gate electrodes 5 and 10 are provided. A photoelectric converting part 1 converts a light signal to a signal charge and accumulates it. Next, the signal is sent through a reading gate 4 to a vertical transferring CCD3. The signal charge sent to the vertical transferring CCD3 is transferred successively in the vertical direction by the pulse impressed to the first and sixth gate electrodes 59 and 10. Thus, the vertical transferring CCD3 can handle up to the charge to be able to be accumulated with four adjoining gate electrodes, and it comes to be equal to the one, in which the area is increased by about 33%, comapred with the vertical transferring CCD constituted of four conventional gate electrodes.
|
