| 摘要 |
PURPOSE:To decrease damage of silicon substrate and contamination due to impurities, by evaporating a silicon nitride film, before evaporating a silicon oxide film by a CVD method. CONSTITUTION:On the surface of a substrate 10, a gate insulating film 11 and a gate electrode 3 are formed. With these parts as masks, impurities are injected and diffused, and a low-concentration impurity diffued drain part 4 and a source part 5 are formed. Then, a silicon nitride film 12 and a silicon oxide film 6 are sequentially evaporated on the surfaces of the gate insulating film 11 and the gate electrode 3. The silicon oxide film 6 is removed by plasma etching. The time point when the silicon film 12 at the substrate part is exposed is detected, and the etching is finished. Then, a side wall 7 of the silicon oxide film is formed on the side surface of the electrode 3. Then, the silicon nitride film 12 on the surfaces of the electrode 3 and the insulating film 11 is removed. Thereafter, with the electrode 3 and the side wall 7 as masks, ions are implanted and diffused in the center of the substrate 10. Thus, high-concentration impurity diffused drain part 8 and a source part 9 are formed.
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