发明名称 FORMATION OF BORON NITRIDE FILM
摘要 PURPOSE:To obtain extremely hard amorphous boron nitride having superior adhesion and corrosion resistance by emitting nitrogen ion beams and boron beams so that they meet at right angles on a rotating substrate in an ion mixing process. CONSTITUTION:A nitrogen ion implanting device 3 and a boron vapor depositing device 4 are perpendicularly attached to a sample chamber 2 provided with a means of rotating a substrate 1 at a prescribed speed. Nitrogen ion beams 5 and boron beams 6 are emitted from the devices 3, 4 so that they meet at right angles on the substrate 1. Thus, extremely hard amorphous boron nitride having superior adhesion and corrosion resistance is formed on the substrate 1.
申请公布号 JPS62263962(A) 申请公布日期 1987.11.16
申请号 JP19860108380 申请日期 1986.05.12
申请人 KOMATSU LTD 发明人 TANDA SATOSHI
分类号 H01L21/318;C23C14/06;C23C14/32;C23C14/48;H01L21/314 主分类号 H01L21/318
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