摘要 |
PURPOSE:To obtain extremely hard amorphous boron nitride having superior adhesion and corrosion resistance by emitting nitrogen ion beams and boron beams so that they meet at right angles on a rotating substrate in an ion mixing process. CONSTITUTION:A nitrogen ion implanting device 3 and a boron vapor depositing device 4 are perpendicularly attached to a sample chamber 2 provided with a means of rotating a substrate 1 at a prescribed speed. Nitrogen ion beams 5 and boron beams 6 are emitted from the devices 3, 4 so that they meet at right angles on the substrate 1. Thus, extremely hard amorphous boron nitride having superior adhesion and corrosion resistance is formed on the substrate 1.
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