| 摘要 |
PURPOSE:To obtain a film having excellent uniformity including a refractive index, density, etc. by irradiating a raw material by optimum energy density and energy input and smoothly promoting a chemical reaction. CONSTITUTION:A substrate is mounted horizontally under the environment of pressure of 0.2Torr-100Torr and a temperature of 100-500 deg.C while an silicon compound and a nitrogen compound are introduced under the environment, the surface of the substrate is irradiated horizontally by tunable pulse laser beams having a wavelength of 215+ or -7nm and repeated number of 20+ or -10Hz, and an silicon nitride film is formed onto the substrate. The rate of film formation is decreased when pressure reaches less than 0.2Torr, and particulates are generated partially and are disadvantageous to film formation. An excellent film cannot be shaped when a temperature is less than 100 deg.C, and the state in which stress is applied to the film formed is brought when the temperature exceeds 500 deg.C. A laser such as a YAG-DYE laser can be used as a light source for tunable laser beams employed.
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