| 摘要 |
PURPOSE:To form a uniform thin-film onto the surface of a wafer by shaping a raw gas supply nozzle in constitution in which the quantity of a raw gas fed to the peripheral section of the wafer is made more than that fed in the central direction of the wafer. CONSTITUTION:The quantity of a raw gas supplied to the peripheral section of a wafer is made more than the quantity of the raw-material gas caused to flow substantially in parallel with the surface of the wafer in the plural and fed in the central direction of the wafer in H2 gas containing an Si raw gas. A waste gas after used for epitaxial growth is evacuated to the outside of a bell jar 3 by an exhaust nozzle 7. Epitaxial layers having desired film thickness are formed on the surfaces of the wafers, the supply of the Si raw gas from a gas supply nozzle 6 is stopped, purging by H2 gas is conducted, heating by a high-frequency coil 5 is suspended, and the temperature of a susceptor 4 is lowered. Accoridngly, the film thickness of the epitaxial layers shaped onto the wafers having a large diameter can be equalized.
|
