| 摘要 |
PURPOSE:To provide the semiconductor device capable of being thinner formed even if an electrode pad and an inner lead formed on a semiconductor device are connected using bonding wires as well as the formation method in less step numbers of the electrode pad thereof. CONSTITUTION:An electrode pad 12 and inner leads 13 formed on the position lower than the surface 11a of a semiconductor device 11 are connected by bonding wires 14 and then these elements 12, 13 and 14 are sealed into one-body in a package 15. Furthermore, the specified electrode pad 12 can be formed by dividing the recession formed in the state of intersecting a street on a wafer simultaneously with cutting-off the street. |
