FORMATION OF TITANIUM NITRIDE ON SEMICONDUCTOR WAFER BY REACTION OF TITANIUM WITH NITROGEN-BEARING GAS IN AN INTEGRATED PROCESSING SYSTEM,申请号US19900511652-传众专利搜索

发明名称	FORMATION OF TITANIUM NITRIDE ON SEMICONDUCTOR WAFER BY REACTION OF TITANIUM WITH NITROGEN-BEARING GAS IN AN INTEGRATED PROCESSING SYSTEM
摘要
申请公布号	US5236868(A)	申请公布日期	1993.08.17
申请号	US19900511652	申请日期	1990.04.20
申请人	APPLIED MATERIALS, INC.	发明人	NULMAN, JAIM
分类号	C23C16/34;H01L21/28;H01L21/285;H01L21/321	主分类号	C23C16/34
代理机构		代理人
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