| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a nonvolatile storage and an operating method and a manufacturing method. SOLUTION: This storage is provided with a plurality of bit lines arranged in parallel at constant intervals and a plurality of word lines arranged perpendicularly to the bit lines at constant intervals. Unit cells having laminated gate structures of floating gates and control gates are positioned in crossing regions of the bit lines and the word lines. The two cells are linked with the bit line by using one bit line contact. Source active regions of the cells are linked with the same bit line via different bit line contact. Two symmetric cells are commonly connected to one source active region. In an operating method of a nonvolatile storage having the source active region, in the program operation injecting electrons in the floating gates of the cells, a positive voltage is applied to the bit lines and the word lines of the selected cells, a reference voltage which is low as compared with a bit line voltage is applied to the source lines, and a cell current is generated.</p> |
