| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent precision degradation at a pattern connection part which is caused by alignment error between light exposure and electron beam exposure, without thickening a light exposure pattern and an electron beam exposure pattern. SOLUTION: When a pattern transfer is performed to the same sensitized material using light exposure and electron beam exposure, a pattern data for the light exposure and the electron beam exposure is generated from a device design pattern. Here, a process P1 wherein the contour line of the device design pattern is moved inward by a first amountΔW1, a process P2 wherein an electron beam exposure pattern is extracted from the device design pattern, a process P3 wherein the contour line of the electron beam exposure pattern is moved outward by a second amountΔW2, a process P4 wherein the electron beam exposure pattern is converted into the data format of an electron beam drawing device, a process P5 wherein the light exposure pattern is extracted from the device design pattern, and a process P6 wherein the light exposure pattern is converted into the data format of a mask drawing device, are provided.</p> |
