发明名称 |
THIN FILM TRANSISTOR CIRCUIT AND LIQUID CRYSTAL PANEL WITH DRIVE CIRCUIT USING THE SAME |
摘要 |
<p>PROBLEM TO BE SOLVED: To reduce dimensions of a thin film transistor circuit and to reduce the dimensions of a liquid crystal panel having a drive circuit which uses the thin film transistor circuit. SOLUTION: In a NAND gate, first and second n-MOS transistors are arranged so as to position a grounding electrode 6 and an output electrode 4 substantially on one line and also a gate electrode 7 and a gate electrode 8 substantially on one line. The first and, the second n-MOS transistors are connected by a silicon layer 11 which connects the grounding electrode 6 with the output electrode 4. Thus, the dimension in the vertical direction is having in comparison with the conventional one.</p> |
申请公布号 |
JPH11204795(A) |
申请公布日期 |
1999.07.30 |
申请号 |
JP19980002012 |
申请日期 |
1998.01.08 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
OMAE HIDEKI;MINAMINO YUTAKA |
分类号 |
G02F1/136;G02F1/133;G02F1/1368;G09G3/36;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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