| 摘要 |
<p>A process for inhibiting the formation of metal precipitate defects in an SOI wafer is disclosed. The process includes heating the wafer for a time sufficient to reduce metal concentration in the monocrystalline film through diffusion into the bulk of the wafer. The SOI structure has a permeable insulating layer to allow the diffusion of metals to occur. The diffusion through the oxide can be accomplished by forming direct Si or Si contact regions, by implanting ions selectively into the oxide, or by employing a very thin oxide layer.</p> |
